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Silicon Carbide and Aluminum Nitride are the primary choices of substrates for GaN devices, and are grown from the vapor phase by Physical Vapor Transport. We have developed detailed finite element models for the growth of these materials, coupling induction heating and heat transfer within the reactor with detailed thermo-chemistry of sublimation from powder and single crystal growth in presence of inert as well as chemically reactive injected gases. In a project in this area, the simulation tool was used to conduct a large number of what-if analyses to identify the optimal growth furniture geometry.
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