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MOCVD Reactor
Physical Vapor Transport of SiC/AlN
Crystal Growth of Semiconductors
Rapid Thermal Processing
Thermal Management
Electro-Magnetic Stabilization
NASA Micro-Gravity Processing
Industrial Equipment
Bio-Medical Devices
Biological Systems
Design, Build and Install

Project: Multi-Layer Epitaxy Of GaN In A Multi-Wafer Planetary Reactor

In a multi-wafer rotating planetary reactor, the thickness and the uniformity of the film deposited on the wafer depends strongly on the complex heat transfer, three-dimensional flow, and gas-gas and gas-solid reactions in the reactor.

In one project we developed a detailed model of an MOCVD reactor, including induction heating, heat transfer through semi-transparent media, and gas flow and gas-phase chemistry for a rotating puck reactor. The analysis was focused on identifying the effect of geometric and processing parameters on the thickness and uniformity of the deposited films. This work resulted in re-design of certain reactor components.